Over 20 chip manufacturers from Japan and the United States will be teaming up to develop technology and produce a next-generation semiconductor with the help of MRAM, which is magnetoresistive random access memory. Tokyo Electron of Japan, along with US-based chip giant Micron Technology said that they will lead the joint project.
The two companies said that they are aiming to perfect the technology in the span of three years and mass production will most likely begin as early as 2018. The new technology MRAM is set to be the next step when it comes to computing memory over the current standard DRAM, which is dynamic random access memory.
The supporters of MRAM said that the realistic benefits of new technology will be faster computing times, as well as lower power consumption, which will ultimately result in long-lasting batteries. The technology – which is still under development – is expected to have a memory capacity ten times bigger than DRAM and reduce its electricity draw to up to two-thirds.
Reports say that other participants in the project include Shin-Etsu Chemicals, Renesas Electronics and Hitachi. In a separate project, Toshiba and SK Hynix of South Korea are jointly developing MRAM.
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